BC,SBC846ALT1G Series Datasheet

BC,SBC846ALT1G Series

Datasheet specifications

Datasheet's name BC,SBC846ALT1G Series
File size 233.672 KB
File type pdf
Number of pages 14

Download Datasheet BC,SBC846ALT1G Series

Download Datasheet

Other documentations

BC848BLT1G 13 pages

Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi BC846ALT1G
  • Transistor Type: NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 300mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 110@2mA,5V
  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 65V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@100mA,5mA
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 300mW
  • Frequency - Transition: 100MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Base Part Number: BC846
  • detail: Bipolar (BJT) Transistor NPN 65V 100mA 100MHz 300mW Surface Mount SOT-23-3 (TO-236)