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- دیتاشیت 2N7000BU
دیتاشیت 2N7000BU
مشخصات دیتاشیت
| نام دیتاشیت | 2N7000BU |
|---|---|
| حجم فایل | 71.41 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 8 |
2N7000BU |
دانلود دیتاشیت |
|---|
سایر مستندات
2N7000, 2N7002, NDS7002A 8 pages
مشخصات فنی
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi 2N7000BU
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 400mW
- Input Capacitance (Ciss@Vds): 50pF@25V
- Continuous Drain Current (Id): 200mA
- Gate Threshold Voltage (Vgs(th)@Id): 3V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 5Ω@500mA,10V
- Package: TO-92-3
- Manufacturer: onsemi
- Series: -
- Packaging: Bulk
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 400mW (Ta)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92-3
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number: 2N7000
- detail: N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3