2N3771G 数据手册
其他文档
2N3771, 72 5 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi 2N3772G
- Transistor Type: NPN
- Operating Temperature: -65°C~+200°C@(Tj)
- Collector Current (Ic): 20A
- Power Dissipation (Pd): 150W
- Transition Frequency (fT): 200kHz
- DC Current Gain (hFE@Ic,Vce): 15@10A,4V
- Collector Cut-Off Current (Icbo): 10mA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 4V@4A,20A
- Package: TO-204
- Manufacturer: onsemi
- Series: -
- Packaging: Tray
- Part Status: Active
- Current - Collector (Ic) (Max): 20A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 4A, 20A
- Current - Collector Cutoff (Max): 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 10A, 4V
- Power - Max: 150W
- Frequency - Transition: 200kHz
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-204 (TO-3)
- Base Part Number: 2N3772
- detail: Bipolar (BJT) Transistor NPN 60V 20A 200kHz 150W Through Hole TO-204 (TO-3)