SBCP56-10T1G 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi SBCP56-10T1G
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 1A
- Power Dissipation (Pd): 1.5W
- Transition Frequency (fT): 130MHz
- DC Current Gain (hFE@Ic,Vce): 63@150mA,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 80V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
- Package: SOT-223-4
- Manufacturer: onsemi
- Series: -
- Packaging: Digi-Reel®
- Part Status: Obsolete
- Current - Collector (Ic) (Max): 1.2A
- Voltage - Collector Emitter Breakdown (Max): 80V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1W
- Frequency - Transition: -
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-4
- Base Part Number: BCP56
- detail: Bipolar (BJT) Transistor NPN 80V 1.2A 1W Surface Mount SOT-223-4