- صفحه اصلی
- دانلود دیتاشیت
- دیتاشیت 2SA2013-TD-E
دیتاشیت 2SA2013-TD-E
مشخصات دیتاشیت
نام دیتاشیت | 2SA2013/2SC5566 |
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حجم فایل | 366.905 کیلوبایت |
نوع فایل | |
تعداد صفحات | 8 |
دانلود دیتاشیت 2SA2013/2SC5566 |
2SA2013/2SC5566 Datasheet |
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مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi 2SA2013-TD-E
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 4A
- Power Dissipation (Pd): 1.3W
- Transition Frequency (fT): 360MHz
- DC Current Gain (hFE@Ic,Vce): 200@500mA,2V
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@2A,100mA
- Package: SOT-89
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- Current - Collector (Ic) (Max): 4A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
- Power - Max: 3.5W
- Frequency - Transition: 400MHz
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: PCP
- Base Part Number: 2SA2013
- detail: Bipolar (BJT) Transistor PNP 50V 4A 400MHz 3.5W Surface Mount PCP