دیتاشیت 2SA2013-TD-E

2SA2013/2SC5566

مشخصات دیتاشیت

نام دیتاشیت 2SA2013/2SC5566
حجم فایل 366.905 کیلوبایت
نوع فایل pdf
تعداد صفحات 8

دانلود دیتاشیت 2SA2013/2SC5566

2SA2013/2SC5566 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi 2SA2013-TD-E
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 4A
  • Power Dissipation (Pd): 1.3W
  • Transition Frequency (fT): 360MHz
  • DC Current Gain (hFE@Ic,Vce): 200@500mA,2V
  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@2A,100mA
  • Package: SOT-89
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 340mV @ 100mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 3.5W
  • Frequency - Transition: 400MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PCP
  • Base Part Number: 2SA2013
  • detail: Bipolar (BJT) Transistor PNP 50V 4A 400MHz 3.5W Surface Mount PCP

دیتاشیت محصولات مشابه