FDP51N25 Datasheet

FDP51N25

Datasheet specifications

Datasheet's name FDP51N25
File size 70.016 KB
File type pdf
Number of pages 13

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Other documentations

TO220B03 Pkg Drawing 1 pages

FDP51N25, FDPF51N25 13 pages

Technical specifications

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FDP51N25
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 320W
  • Total Gate Charge (Qg@Vgs): 70nC@10V
  • Drain Source Voltage (Vdss): 250V
  • Input Capacitance (Ciss@Vds): 3410pF@25V
  • Continuous Drain Current (Id): 51A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10V,25.5A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: UniFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 320W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
  • Base Part Number: FDP51
  • detail: N-Channel 250V 51A (Tc) 320W (Tc) Through Hole TO-220-3

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