دیتاشیت 2SA2012-TD-E
مشخصات دیتاشیت
| نام دیتاشیت |
2SA2012-TD-E
|
| حجم فایل |
52.936
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi 2SA2012-TD-E
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
5A
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Power Dissipation (Pd):
3.5W
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Transition Frequency (fT):
350MHz
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DC Current Gain (hFE@Ic,Vce):
200@500mA,2V
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Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
30V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
170mV@2.5A,125mA
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Package:
SOT-89
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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Current - Collector (Ic) (Max):
5A
-
Voltage - Collector Emitter Breakdown (Max):
30V
-
Vce Saturation (Max) @ Ib, Ic:
210mV @ 30mA, 1.5A
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
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Power - Max:
3.5W
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Frequency - Transition:
420MHz
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Mounting Type:
Surface Mount
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Package / Case:
TO-243AA
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Supplier Device Package:
PCP
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Base Part Number:
2SA2012
-
detail:
Bipolar (BJT) Transistor PNP 30V 5A 420MHz 3.5W Surface Mount PCP
