2SB1216/2SD1816 دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
2SB1216/2SD1816
|
|
حجم فایل
|
514.172
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
7
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi 2SD1816S-TL-H
-
Transistor Type:
NPN
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
4A
-
Power Dissipation (Pd):
20W
-
Transition Frequency (fT):
180MHz
-
DC Current Gain (hFE@Ic,Vce):
140@500mA,5V
-
Collector Cut-Off Current (Icbo):
1uA
-
Collector-Emitter Breakdown Voltage (Vceo):
100V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
150mV@2A,200mA
-
Package:
TP-FA
-
Manufacturer:
onsemi
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
Current - Collector (Ic) (Max):
4A
-
Voltage - Collector Emitter Breakdown (Max):
100V
-
Vce Saturation (Max) @ Ib, Ic:
400mV @ 200mA, 2A
-
Current - Collector Cutoff (Max):
1µA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
140 @ 500mA, 5V
-
Power - Max:
1W
-
Frequency - Transition:
180MHz
-
Mounting Type:
Surface Mount
-
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
-
Supplier Device Package:
2-TP-FA
-
Base Part Number:
2SD1816
-
detail:
Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Surface Mount 2-TP-FA
