ECH8663R-TL-H 数据手册
其他文档
ECH8663R 7 pages
技术规格
- RoHS: true
- Type: 2 N-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi ECH8663R-TL-H
- Power Dissipation (Pd): 1.5W
- Total Gate Charge (Qg@Vgs): 12.3nC@4.5V
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 8A
- Drain Source On Resistance (RDS(on)@Vgs,Id): 20.5mΩ@4A,4.5V
- Package: ECH-8
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8A
- Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 1.5W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: 8-ECH
- Base Part Number: ECH8663
- detail: Mosfet Array 2 N-Channel (Dual) 30V 8A 1.5W Surface Mount 8-ECH