دیتاشیت ECH8308-TL-H

ECH8308

مشخصات دیتاشیت

نام دیتاشیت ECH8308
حجم فایل 204.792 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت ECH8308

ECH8308 Datasheet

مشخصات

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi ECH8308-TL-H
  • Power Dissipation (Pd): 1.6W
  • Total Gate Charge (Qg@Vgs): 26nC@4.5V
  • Drain Source Voltage (Vdss): 12V
  • Input Capacitance (Ciss@Vds): 2300pF@6V
  • Continuous Drain Current (Id): 10A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 12.5mΩ@5A,4.5V
  • Package: ECH-8
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 6V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-ECH
  • Package / Case: 8-SMD, Flat Lead
  • Base Part Number: ECH8308
  • detail: P-Channel 12V 10A (Ta) 1.6W (Ta) Surface Mount 8-ECH

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