دیتاشیت ECH8310-TL-H

ECH8310

مشخصات دیتاشیت

نام دیتاشیت ECH8310
حجم فایل 1033.684 کیلوبایت
نوع فایل pdf
تعداد صفحات 5

دانلود دیتاشیت ECH8310

ECH8310 Datasheet

مشخصات

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi ECH8310-TL-H
  • Power Dissipation (Pd): 1.5W
  • Total Gate Charge (Qg@Vgs): 28nC@10V
  • Drain Source Voltage (Vdss): 30V
  • Input Capacitance (Ciss@Vds): 1400pF@10V
  • Continuous Drain Current (Id): 9A
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 17mΩ@4.5A,10V
  • Package: ECH-8
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-ECH
  • Package / Case: 8-SMD, Flat Lead
  • Base Part Number: ECH8310
  • detail: P-Channel 30V 9A (Ta) 1.5W (Ta) Surface Mount 8-ECH

دیتاشیت محصولات مشابه