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FQD9N25TM Datasheet
Datasheet specifications
| Datasheet's name | FQD9N25, FQU9N25 |
|---|---|
| File size | 927.709 KB |
| File type | |
| Number of pages | 10 |
Download Datasheet FQD9N25, FQU9N25 |
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Technical specifications
- Manufacturer: ON Semiconductor
- Series: QFET®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 250V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number: FQD9
- detail: N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak