دیتاشیت 2SD1816S-E

2SB1216/2SD1816

مشخصات دیتاشیت

نام دیتاشیت 2SB1216/2SD1816
حجم فایل 514.172 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت 2SB1216/2SD1816

2SB1216/2SD1816 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi 2SD1816S-E
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 4A
  • Power Dissipation (Pd): 20W
  • Transition Frequency (fT): 180MHz
  • DC Current Gain (hFE@Ic,Vce): 140@500mA,5V
  • Collector Cut-Off Current (Icbo): 1uA
  • Collector-Emitter Breakdown Voltage (Vceo): 100V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 150mV@2A,200mA
  • Package: IPAK
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Bulk
  • Part Status: Active
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 180MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: TP
  • Base Part Number: 2SD1816
  • detail: Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Through Hole TP

دیتاشیت محصولات مشابه