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- دیتاشیت FDB14AN06LA0-F085
دیتاشیت FDB14AN06LA0-F085
مشخصات دیتاشیت
نام دیتاشیت | FDB14AN06LA0-F085 |
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حجم فایل | 785.206 کیلوبایت |
نوع فایل | |
تعداد صفحات | 11 |
دانلود دیتاشیت FDB14AN06LA0-F085 |
FDB14AN06LA0-F085 Datasheet |
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مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDB14AN06LA0-F085
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 125W
- Total Gate Charge (Qg@Vgs): 24nC@5V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 2.9nF@25V
- Continuous Drain Current (Id): 60A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 115pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 10.2mΩ@10V,67A
- Package: TO-263AB
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101, PowerTrench®
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 11.6mOhm @ 67A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: FDB14
- detail: N-Channel 60V 67A (Tc) 125W (Tc) Surface Mount TO-263AB