دیتاشیت FQU2N60CTU
مشخصات دیتاشیت
| نام دیتاشیت | FQD2N60C, FQU2N60C |
|---|---|
| حجم فایل | 903.308 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 7 |
دانلود دیتاشیت FQD2N60C, FQU2N60C |
FQD2N60C, FQU2N60C Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FQU2N60CTU
- Power Dissipation (Pd): 2.5W
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 1.9A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.7Ω@10V,950mA
- Package: TO-251-3
- Manufacturer: onsemi
- Series: QFET®
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number: FQU2
- detail: N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK
