دیتاشیت 30A02MH-TL-E
مشخصات دیتاشیت
| نام دیتاشیت |
30A02MH
|
| حجم فایل |
371.871
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi 30A02MH-TL-E
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Transistor Type:
PNP
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Collector Current (Ic):
700mA
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Power Dissipation (Pd):
600mW
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Transition Frequency (fT):
520MHz
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DC Current Gain (hFE@Ic,Vce):
200@10mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
30V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
220mV@10mA,200mA
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Package:
MCPH-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Active
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Current - Collector (Ic) (Max):
700mA
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Voltage - Collector Emitter Breakdown (Max):
30V
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Vce Saturation (Max) @ Ib, Ic:
220mV @ 10mA, 200mA
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 10mA, 2V
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Power - Max:
600mW
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Frequency - Transition:
520MHz
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Operating Temperature:
150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
3-SMD, Flat Lead
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Supplier Device Package:
3-MCPH
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Base Part Number:
30A02
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detail:
Bipolar (BJT) Transistor PNP 30V 700mA 520MHz 600mW Surface Mount 3-MCPH
