MCH3376-TL-E 数据手册
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技术规格
- Manufacturer: ON Semiconductor
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 241mOhm @ 750mA, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 3-MCPH
- Package / Case: 3-SMD, Flat Lead
- Base Part Number: MCH33
- detail: P-Channel 20V 1.5A (Ta) 800mW (Ta) Surface Mount 3-MCPH