دیتاشیت MCH3007-TL-H
مشخصات دیتاشیت
| نام دیتاشیت |
MCH3007
|
| حجم فایل |
406.806
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
12
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MCH3007-TL-H
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
30mA
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Power Dissipation (Pd):
350mW
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Transition Frequency (fT):
8GHz
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DC Current Gain (hFE@Ic,Vce):
60@5mA,5V
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Collector Cut-Off Current (Icbo):
1uA
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Collector-Emitter Breakdown Voltage (Vceo):
12V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
-
-
Package:
MCPH-3
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tape & Reel (TR)
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Part Status:
Active
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Voltage - Collector Emitter Breakdown (Max):
12V
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Frequency - Transition:
8GHz
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Noise Figure (dB Typ @ f):
1.2dB @ 1GHz
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Gain:
12dB
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Power - Max:
350mW
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DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 5mA, 5V
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Current - Collector (Ic) (Max):
30mA
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Mounting Type:
Surface Mount
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Package / Case:
3-SMD, Flat Lead
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Supplier Device Package:
3-MCPH
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Base Part Number:
MCH30
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detail:
RF Transistor NPN 12V 30mA 8GHz 350mW Surface Mount 3-MCPH
