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FDB9406L-F085 Datasheet
Datasheet specifications
| Datasheet's name | FDB9406L-F085 |
|---|---|
| File size | 719.35 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet FDB9406L-F085 |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDB9406L-F085
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 176W
- Total Gate Charge (Qg@Vgs): 121nC@0~10V
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 8.6nF@20V
- Continuous Drain Current (Id): 110A
- Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 107pF@20V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.2mΩ@10V,80A
- Package: TO-263
- Manufacturer: onsemi
- Series: Automotive, AEC-Q101, PowerTrench®
- Packaging: Tape & Reel (TR)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 20V
- FET Feature: -
- Power Dissipation (Max): 176W (Tj)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263AB)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: FDB9406
- detail: N-Channel 40V 110A (Tc) 176W (Tj) Surface Mount D²PAK (TO-263AB)