دیتاشیت FDB9406L-F085
مشخصات دیتاشیت
| نام دیتاشیت |
FDB9406L-F085
|
| حجم فایل |
719.35
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FDB9406L-F085
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
176W
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Total Gate Charge (Qg@Vgs):
121nC@0~10V
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Drain Source Voltage (Vdss):
40V
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Input Capacitance (Ciss@Vds):
8.6nF@20V
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Continuous Drain Current (Id):
110A
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Gate Threshold Voltage (Vgs(th)@Id):
1.8V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
107pF@20V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.2mΩ@10V,80A
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Package:
TO-263
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Manufacturer:
onsemi
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Series:
Automotive, AEC-Q101, PowerTrench®
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Packaging:
Tape & Reel (TR)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
40V
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Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
1.5mOhm @ 80A, 10V
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Vgs(th) (Max) @ Id:
3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
170nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
8600pF @ 20V
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FET Feature:
-
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Power Dissipation (Max):
176W (Tj)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D²PAK (TO-263AB)
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
FDB9406
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detail:
N-Channel 40V 110A (Tc) 176W (Tj) Surface Mount D²PAK (TO-263AB)
