FCI25N60N-F102 Datasheet
Datasheet specifications
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Datasheet's name
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FCI25N60N-F102
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File size
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70.016
KB
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File type
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pdf
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Number of pages
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10
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Technical specifications
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FCI25N60N-F102
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Package:
TO-262
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Manufacturer:
onsemi
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Series:
SupreMOS™
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Packaging:
Tube
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Part Status:
Obsolete
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
600V
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Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
125mOhm @ 12.5A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
74nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
3352pF @ 100V
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FET Feature:
-
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Power Dissipation (Max):
216W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
I2PAK (TO-262)
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Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
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Base Part Number:
FCI25
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detail:
N-Channel 600V 25A (Tc) 216W (Tc) Through Hole I2PAK (TO-262)
