NTGD4167CT1G Datasheet
Datasheet specifications
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Datasheet's name
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NTGD4167CT1G
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File size
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98.162
KB
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File type
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pdf
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Number of pages
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10
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Technical specifications
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTGD4167CT1G
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Power Dissipation (Pd):
-
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Total Gate Charge (Qg@Vgs):
-
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Drain Source Voltage (Vdss):
-
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Input Capacitance (Ciss@Vds):
-
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Continuous Drain Current (Id):
-
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Gate Threshold Voltage (Vgs(th)@Id):
-
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
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Package:
TSOP-6-1.5mm
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Manufacturer:
onsemi
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Series:
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N and P-Channel
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FET Feature:
Logic Level Gate
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
2.6A, 1.9A
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Rds On (Max) @ Id, Vgs:
90mOhm @ 2.6A, 4.5V
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Vgs(th) (Max) @ Id:
1.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
5.5nC @ 4.5V
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Input Capacitance (Ciss) (Max) @ Vds:
295pF @ 15V
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Power - Max:
900mW
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Surface Mount
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Package / Case:
SOT-23-6 Thin, TSOT-23-6
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Supplier Device Package:
6-TSOP
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Base Part Number:
NTGD41
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detail:
Mosfet Array N and P-Channel 30V 2.6A, 1.9A 900mW Surface Mount 6-TSOP
