دیتاشیت NTGD4167CT1G

NTGD4167C

مشخصات دیتاشیت

نام دیتاشیت NTGD4167C
حجم فایل 146.41 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت NTGD4167C

NTGD4167C Datasheet

مشخصات

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NTGD4167CT1G
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: TSOP-6-1.5mm
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A, 1.9A
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V
  • Power - Max: 900mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
  • Base Part Number: NTGD41
  • detail: Mosfet Array N and P-Channel 30V 2.6A, 1.9A 900mW Surface Mount 6-TSOP