STP80NF10FP 数据手册
其他文档
STP80NF10FP 12 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STP80NF10FP
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 45W
- Total Gate Charge (Qg@Vgs): 189nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 4300pF@25V
- Continuous Drain Current (Id): 38A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 15mΩ@40A,10V
- Package: TO-220
- Manufacturer: STMicroelectronics
- Series: STripFET™ II
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 189nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
- Base Part Number: STP80N
- detail: N-Channel 100V 38A (Tc) 45W (Tc) Through Hole TO-220FP