STP31N65M5 数据手册
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技术规格
- Manufacturer: STMicroelectronics
- Series: MDmesh™ V
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 148mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 816pF @ 100V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
- Base Part Number: STP31N
- detail: N-Channel 650V 22A (Tc) 150W (Tc) Through Hole TO-220