STP30NF20, STB30NF20, STW30NF20 数据手册
数据手册规格
| 数据手册名称 | STP30NF20, STB30NF20, STW30NF20 |
|---|---|
| 文件大小 | 395.72 千字节 |
| 文件类型 | |
| 页数 | 16 |
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其他文档
STP30NF20 16 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STB30NF20
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 125W
- Total Gate Charge (Qg@Vgs): 38nC@10V
- Drain Source Voltage (Vdss): 200V
- Input Capacitance (Ciss@Vds): 1597pF@25V
- Continuous Drain Current (Id): 30A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 75mΩ@10V,15A
- Package: TO-263
- Manufacturer: STMicroelectronics
- Series: STripFET™
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 75mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1597pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number: STB30N
- detail: N-Channel 200V 30A (Tc) 125W (Tc) Surface Mount D2PAK