STP12NM50N Datasheet

STx12NM50N

Datasheet specifications

Datasheet's name STx12NM50N
File size 605.317 KB
File type pdf
Number of pages 19

Download Datasheet STx12NM50N

Download Datasheet

Other documentations

No other documentation was found!

Technical specifications

  • Manufacturer: STMicroelectronics
  • Series: MDmesh™ II
  • Packaging: Tube
  • Part Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
  • Base Part Number: STP12
  • detail: N-Channel 500V 11A (Tc) 100W (Tc) Through Hole TO-220AB

Similar products