BFU725F/N1,115 Datasheet
Datasheet specifications
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Datasheet's name
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BFU725F/N1,115
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File size
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57.803
KB
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File type
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pdf
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Number of pages
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12
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Technical specifications
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
NXP Semicon BFU725F/N1,115
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
25mA
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Power Dissipation (Pd):
136mW
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Transition Frequency (fT):
55GHz
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DC Current Gain (hFE@Ic,Vce):
280@10mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
2.8V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
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Package:
SOT-343
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Manufacturer:
NXP Semicon
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Series:
-
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Voltage - Collector Emitter Breakdown (Max):
2.8V
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Frequency - Transition:
55GHz
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Noise Figure (dB Typ @ f):
0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
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Gain:
10dB ~ 24dB
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Power - Max:
136mW
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DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 10mA, 2V
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Current - Collector (Ic) (Max):
40mA
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Mounting Type:
Surface Mount
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Package / Case:
SOT-343 Reverse Pinning
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Supplier Device Package:
4-SO
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Base Part Number:
BFU72
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detail:
RF Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount 4-SO
