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12N65F Datasheet
Datasheet specifications
| Datasheet's name | 12N65F |
|---|---|
| File size | 77.916 KB |
| File type | |
| Number of pages | 8 |
Download Datasheet 12N65F |
Download Datasheet |
|---|
Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: GOODWORK 12N65F
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 55W
- Total Gate Charge (Qg@Vgs): -
- Drain Source Voltage (Vdss): 650V
- Input Capacitance (Ciss@Vds): -
- Continuous Drain Current (Id): 12A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 0.65Ω@10V,6A
- Package: TO-220
- Manufacturer: GOODWORK
