دیتاشیت 12N65F
مشخصات دیتاشیت
نام دیتاشیت |
12N65F
|
حجم فایل |
77.916
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
GOODWORK 12N65F
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
55W
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Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
650V
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Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
12A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
0.65Ω@10V,6A
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Package:
TO-220
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Manufacturer:
GOODWORK