دیتاشیت NCE60P25K-VB
مشخصات دیتاشیت
| نام دیتاشیت |
NCE60P25K-VB
|
| حجم فایل |
70.95
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
VBsemi Elec NCE60P25K-VB
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
38.5W
-
Total Gate Charge (Qg@Vgs):
26nC@10V
-
Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
1.14nF@25V
-
Continuous Drain Current (Id):
25A
-
Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
90pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
53mΩ@10V,10A
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Package:
TO-252
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Manufacturer:
VBsemi Elec
