دیتاشیت STF20NM65N-Y11
مشخصات دیتاشیت
| نام دیتاشیت |
STF20NM65N-Y11
|
| حجم فایل |
57.535
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
16
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
STMicroelectronics STF20NM65N-Y11
-
Operating Temperature:
+150°C@(Tj)
-
Power Dissipation (Pd):
30W
-
Total Gate Charge (Qg@Vgs):
44nC@10V
-
Drain Source Voltage (Vdss):
650V
-
Input Capacitance (Ciss@Vds):
1.28nF@50V
-
Continuous Drain Current (Id):
15A
-
Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
10pF@50V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
250mΩ@10V,7.5A
-
Package:
TO-220
-
Manufacturer:
STMicroelectronics
