STF20NM65N-Y11 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STF20NM65N-Y11
- Operating Temperature: +150°C@(Tj)
- Power Dissipation (Pd): 30W
- Total Gate Charge (Qg@Vgs): 44nC@10V
- Drain Source Voltage (Vdss): 650V
- Input Capacitance (Ciss@Vds): 1.28nF@50V
- Continuous Drain Current (Id): 15A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 10pF@50V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 250mΩ@10V,7.5A
- Package: TO-220
- Manufacturer: STMicroelectronics