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PBSS5350X,115 Datasheet
Datasheet specifications
| Datasheet's name | PBSS5350X,115 |
|---|---|
| File size | 51.873 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet PBSS5350X,115 |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Nexperia PBSS5350X,135
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 3A
- Power Dissipation (Pd): 1.4W
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 200@1A,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 390mV@3A,300mA
- Package: SOT-89
- Manufacturer: Nexperia