FDP51N25, FDPF51N25 دیتاشیت

FDP51N25, FDPF51N25

مشخصات دیتاشیت

نام دیتاشیت FDP51N25, FDPF51N25
حجم فایل 1227.26 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

دانلود دیتاشیت FDP51N25, FDPF51N25

دانلود دیتاشیت

سایر مستندات

مستندات دیگری یافت نشد!

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 38W
  • Total Gate Charge (Qg@Vgs): 70nC@10V
  • Drain Source Voltage (Vdss): 250V
  • Input Capacitance (Ciss@Vds): 3410pF@25V
  • Continuous Drain Current (Id): 51A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 60mΩ@10V,25.5A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: UniFET™
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 25.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 38W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FDPF5
  • detail: N-Channel 250V 51A (Tc) 38W (Tc) Through Hole TO-220F

محصولات مشابه