MJD127G

MJD127G

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Manufacturer onsemi
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Datasheet MJD127G
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Specifications

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Darlington Transistors
  • Datasheet onsemi MJD127G
  • Transistor Type PNP
  • Operating Temperature -65°C~+150°C@(Tj)
  • Collector Current (Ic) 8A
  • Power Dissipation (Pd) 1.75W
  • Transition frequency (fT) 4MHz
  • DC current gain (hFE@Vce,Ic) 1000@4V,4A
  • Collector-emitter voltage (Vceo) 100V
  • Collector cut-off current (Icbo@Vcb) 10uA
  • Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 4V@8A,80mA
  • Package TO-252
  • Manufacturer onsemi

Sellers


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MJD127G MJD127G Not Available No price The price of this shop's products has not been updated! Online shopping

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