STW4N150

STW4N150

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Technical specifications:
Manufacturer STMicroelectronics
Package ---
Datasheet STW4N150
Description ---

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Specifications

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet STMicroelectronics STW4N150
  • Power Dissipation (Pd) 160W
  • Total Gate Charge (Qg@Vgs) 50nC@10V
  • Drain Source Voltage (Vdss) 1.5kV
  • Input Capacitance (Ciss@Vds) 1300pF@25V
  • Continuous Drain Current (Id) 4A
  • Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 7Ω@10V,2A
  • Package TO-247
  • Manufacturer STMicroelectronics

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Price 
STW4N150 STW4N150 No price Online shopping

Last shop price change:

STW4N150 STW4N150 Not Available 188000 IRT Online shopping

Last shop price change: