FQP30N06L
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| Manufacturer | ON Semiconductor |
| Package | TO-220-3 |
| Datasheet | FQP30N06L |
| Description | N-Channel 60V 32A (Tc) 79W (Tc) Through Hole TO-220-3 |
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Specifications
- Manufacturer ON Semiconductor
- Series QFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
- Rds On (Max) @ Id, Vgs 35mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 20nC @ 5V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 25V
- FET Feature -
- Power Dissipation (Max) 79W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Package / Case TO-220-3
- Base Part Number FQP3
- detail N-Channel 60V 32A (Tc) 79W (Tc) Through Hole TO-220-3
Sellers
| Price | ||||
|
|
FQP30N06L | No price |
Online shopping
Last shop price change: |
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|
|
FQP30N06L | Not Available No price |
Online shopping
Last shop price change: |