FJP13009TU
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| Manufacturer | ON Semiconductor |
| Package | TO-220-3 |
| Datasheet | FJP13009 |
| Description | Bipolar (BJT) Transistor NPN 400V 12A 4MHz 100W Through Hole TO-220-3 |
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Specifications
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 12A
- Voltage - Collector Emitter Breakdown (Max) 400V
- Vce Saturation (Max) @ Ib, Ic 3V @ 3A, 12A
- Current - Collector Cutoff (Max) -
- DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A, 5V
- Power - Max 100W
- Frequency - Transition 4MHz
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220-3
- Base Part Number FJP13009
- detail Bipolar (BJT) Transistor NPN 400V 12A 4MHz 100W Through Hole TO-220-3
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