sellers PDTC143ZE,115
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Specifications
- Manufacturer NXP USA Inc.
- Series -
- Packaging Cut Tape (CT)
- Part Status Obsolete
- Transistor Type NPN - Pre-Biased
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Resistor - Base (R1) 4.7 kOhms
- Resistor - Emitter Base (R2) 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) 1µA
- Power - Max 150mW
- Mounting Type Surface Mount
- Package / Case SC-75, SOT-416
- Supplier Device Package SC-75
- Base Part Number PDTC14
- detail Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount SC-75
Sellers
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