IRF530N-VB
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| Manufacturer | VBsemi Elec |
| Package | --- |
| Datasheet | IRF530N-VB |
| Description | --- |
sellers IRF530N-VB
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规格
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet VBsemi Elec IRF530N-VB
- Power Dissipation (Pd) -
- Total Gate Charge (Qg@Vgs) -
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) -
- Continuous Drain Current (Id) 18A
- Gate Threshold Voltage (Vgs(th)@Id) -
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 92mΩ@10V,18A
- Package TO-220AB-3
- Manufacturer VBsemi Elec
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