IPAW60R280P7S E8228

IPAW60R280P7S E8228

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Technical specifications:
Manufacturer Infineon Technologies
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Specifications

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet Infineon Technologies IPAW60R280P7S E8228
  • Operating Temperature -40°C~+150°C@(Tj)
  • Power Dissipation (Pd) 24W
  • Total Gate Charge (Qg@Vgs) 18nC@0~10V
  • Drain Source Voltage (Vdss) 650V
  • Input Capacitance (Ciss@Vds) 761pF@400V
  • Continuous Drain Current (Id) 12A
  • Gate Threshold Voltage (Vgs(th)@Id) 3.5V@190uA
  • Reverse Transfer Capacitance (Crss@Vds) -
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 214mΩ@10V,3.8A
  • Package TO-220
  • Manufacturer Infineon Technologies

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