TK55S10N1,LQ
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| Manufacturer | TOSHIBA |
| Package | --- |
| Datasheet | TK55S10N1,LQ |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet TOSHIBA TK55S10N1,LQ
- Power Dissipation (Pd) 157W
- Total Gate Charge (Qg@Vgs) 49nC@10V
- Drain Source Voltage (Vdss) 100V
- Input Capacitance (Ciss@Vds) 3280pF@10V
- Continuous Drain Current (Id) 55A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@500uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 6.5mΩ@10V,27.5A
- Package TO-252
- Manufacturer TOSHIBA
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