IRFB4019PBF
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| Manufacturer | Infineon Technologies |
| Package | --- |
| Datasheet | IRFB4019PBF |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Infineon Technologies IRFB4019PBF
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 80W
- Total Gate Charge (Qg@Vgs) 20nC@10V
- Drain Source Voltage (Vdss) 150V
- Input Capacitance (Ciss@Vds) 800pF@50V
- Continuous Drain Current (Id) 17A
- Gate Threshold Voltage (Vgs(th)@Id) 4.9V@50uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 95mΩ@10V,10A
- Package TO-220-3
- Manufacturer Infineon Technologies
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