2SB1132G-R-AB3-R
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| Manufacturer | UTC(Unisonic Tech) |
| Package | --- |
| Datasheet | 2SB1132G-R-AB3-R |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet UTC(Unisonic Tech) 2SB1132G-R-AB3-R
- Transistor Type PNP
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 1A
- Power Dissipation (Pd) 500mW
- Transition Frequency (fT) 150MHz
- DC Current Gain (hFE@Ic,Vce) 180@100mA,3V
- Collector Cut-Off Current (Icbo) 500nA
- Collector-Emitter Breakdown Voltage (Vceo) 32V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 200mV@500mA,50mA
- Package SOT-89-3
- Manufacturer UTC(Unisonic Tech)
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