MMBT2907A RFG
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| Manufacturer | Taiwan Semiconductor |
| Package | --- |
| Datasheet | MMBT2907A RFG |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Taiwan Semiconductor MMBT2907A RFG
- Transistor Type PNP
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 600mA
- Power Dissipation (Pd) 350mW
- Transition Frequency (fT) 200MHz
- DC Current Gain (hFE@Ic,Vce) 100@150mA,10V
- Collector Cut-Off Current (Icbo) 50nA
- Collector-Emitter Breakdown Voltage (Vceo) 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.6V@500mA,50mA
- Package SOT-23(TO-236)
- Manufacturer Taiwan Semiconductor
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