PMST2222,115
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| Manufacturer | Nexperia |
| Package | --- |
| Datasheet | PMST2222,115 |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Nexperia PMST2222,115
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 600mA
- Power Dissipation (Pd) 200mW
- Transition Frequency (fT) 250MHz
- DC Current Gain (hFE@Ic,Vce) 100@150mA,10V
- Collector Cut-Off Current (Icbo) 10nA
- Collector-Emitter Breakdown Voltage (Vceo) 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.6V@500mA,50mA
- Package SOT-323-3
- Manufacturer Nexperia
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