2N65 TO252-VB
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| Manufacturer | VBsemi Elec |
| Package | --- |
| Datasheet | 2N65 TO252-VB |
| Description | --- |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet VBsemi Elec 2N65 TO252-VB
- Power Dissipation (Pd) 60W
- Drain Source Voltage (Vdss) 650V
- Continuous Drain Current (Id) 2A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 3.8Ω@10V,3.1A
- Package TO-252
- Manufacturer VBsemi Elec
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