MMBT3904-G

MMBT3904-G

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Technical specifications:
Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd.
Package ---
Datasheet MMBT3904-G
Description ---

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Specifications

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. MMBT3904-G
  • Transistor Type NPN
  • Operating Temperature +150°C@(Tj)
  • Collector Current (Ic) 200mA
  • Power Dissipation (Pd) 200mW
  • Transition Frequency (fT) 300MHz
  • DC Current Gain (hFE@Ic,Vce) 100@10mA,1V
  • Collector Cut-Off Current (Icbo) 50nA
  • Collector-Emitter Breakdown Voltage (Vceo) 40V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@50mA,5mA
  • Package SOT-23
  • Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd.

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