NCEP60T18
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| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | --- |
| Datasheet | NCEP60T18 |
| Description | --- |
sellers NCEP60T18
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NCEP60T18 | No price |
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NCEP60T18 | Not Available 131950 IRT |
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Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet Wuxi NCE Power Semiconductor NCEP60T18
- Power Dissipation (Pd) 220W
- Drain Source Voltage (Vdss) 60V
- Continuous Drain Current (Id) 180A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 2.9mΩ@10V,20A
- Package TO-220
- Manufacturer Wuxi NCE Power Semiconductor
Sellers
| Price | ||||
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|
NCEP60T18 | No price |
Online shopping
Last shop price change: |
|
|
|
NCEP60T18 | Not Available 131950 IRT |
Online shopping
Last shop price change: |
