2SD965A
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| Manufacturer | Jiangsu Changjing Electronics Technology Co., Ltd. |
| Package | --- |
| Datasheet | 2SD965A |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. 2SD965A
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 5A
- Power Dissipation (Pd) 750mW
- Transition Frequency (fT) 150MHz
- DC Current Gain (hFE@Ic,Vce) 340@500mA,2V
- Collector Cut-Off Current (Icbo) 100nA
- Collector-Emitter Breakdown Voltage (Vceo) 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1V@3A,100mA
- Package SOT-89
- Manufacturer Jiangsu Changjing Electronics Technology Co., Ltd.
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