FDD86369
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| Manufacturer | onsemi |
| Package | --- |
| Datasheet | FDD86369 |
| Description | --- |
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Specifications
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDD86369
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 150W
- Total Gate Charge (Qg@Vgs) 54nC@10V
- Drain Source Voltage (Vdss) 80V
- Input Capacitance (Ciss@Vds) 2530pF@40V
- Continuous Drain Current (Id) 90A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 7.9mΩ@80A,10V
- Package TO-252
- Manufacturer onsemi
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