NDT452AP

NDT452AP

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Technical specifications:
Manufacturer onsemi
Package TO-261-4, TO-261AA
Datasheet NDT452AP
Description ---

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Specifications

  • RoHS true
  • Type P Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi NDT452AP
  • Operating Temperature -65°C~+150°C@(Tj)
  • Power Dissipation (Pd) 3W
  • Total Gate Charge (Qg@Vgs) 30nC@10V
  • Drain Source Voltage (Vdss) 30V
  • Input Capacitance (Ciss@Vds) 690pF@15V
  • Continuous Drain Current (Id) 5A
  • Gate Threshold Voltage (Vgs(th)@Id) 2.8V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 65mΩ@10V,5A
  • Package SOT-223-4
  • Manufacturer onsemi
  • Series -
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type P-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 30V
  • Current - Continuous Drain (Id) @ 25°C 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Rds On (Max) @ Id, Vgs 65mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id 2.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 690pF @ 15V
  • FET Feature -
  • Power Dissipation (Max) 3W (Ta)
  • Mounting Type Surface Mount
  • Supplier Device Package SOT-223-4
  • Package / Case TO-261-4, TO-261AA
  • Base Part Number NDT452

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NDT452AP NDT452AP Not Available No price The price of this shop's products has not been updated! Online shopping

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