FDMS86200
In 2 Shop
201,000 IRT
| Manufacturer | onsemi |
| Package | 8-PowerTDFN |
| Datasheet | FDMS86200 |
| Description | N-Channel 150V 9.6A (Ta), 35A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6) |
sellers FDMS86200
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FDMS86200 | 201000 IRT The price of this shop's products has not been updated! |
Online shopping
Last shop price change: |
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FDMS86200 | No price |
Online shopping
Last shop price change: |
Price changes
Specifications
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FDMS86200
- Power Dissipation (Pd) 2.5W
- Drain Source Voltage (Vdss) 150V
- Continuous Drain Current (Id) 9.6A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 18mΩ@10V,9.6A
- Package PDFN-8(4.9x5.8)
- Manufacturer onsemi
- Series PowerTrench®
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 150V
- Current - Continuous Drain (Id) @ 25°C 9.6A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Rds On (Max) @ Id, Vgs 18mOhm @ 9.6A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 2715pF @ 75V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 104W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-PQFN (5x6)
- Package / Case 8-PowerTDFN
- Base Part Number FDMS86
- detail N-Channel 150V 9.6A (Ta), 35A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
Sellers
| Price | ||||
|
|
FDMS86200 | 201000 IRT The price of this shop's products has not been updated! |
Online shopping
Last shop price change: |
|
|
|
FDMS86200 | No price |
Online shopping
Last shop price change: |